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BSC200P03LSGAUMA1

BSC200P03LSGAUMA1

For Reference Only

Part Number BSC200P03LSGAUMA1
PNEDA Part # BSC200P03LSGAUMA1
Description MOSFET P-CH 30V 12.5A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC200P03LSGAUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC200P03LSGAUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC200P03LSGAUMA1, BSC200P03LSGAUMA1 Datasheet (Total Pages: 9, Size: 494.97 KB)
PDFBSC200P03LSGAUMA1 Datasheet Cover
BSC200P03LSGAUMA1 Datasheet Page 2 BSC200P03LSGAUMA1 Datasheet Page 3 BSC200P03LSGAUMA1 Datasheet Page 4 BSC200P03LSGAUMA1 Datasheet Page 5 BSC200P03LSGAUMA1 Datasheet Page 6 BSC200P03LSGAUMA1 Datasheet Page 7 BSC200P03LSGAUMA1 Datasheet Page 8 BSC200P03LSGAUMA1 Datasheet Page 9

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BSC200P03LSGAUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs48.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2430pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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