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BSC0921NDIATMA1

BSC0921NDIATMA1

For Reference Only

Part Number BSC0921NDIATMA1
PNEDA Part # BSC0921NDIATMA1
Description MOSFET 2N-CH 30V 17A/31A TISON8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 52,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC0921NDIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC0921NDIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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BSC0921NDIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A, 31A
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1025pF @ 15V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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Input Capacitance (Ciss) (Max) @ Vds

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

21W

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-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

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