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BSC079N03LSCGATMA1

BSC079N03LSCGATMA1

For Reference Only

Part Number BSC079N03LSCGATMA1
PNEDA Part # BSC079N03LSCGATMA1
Description MOSFET N-CH 30V 14A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,850
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC079N03LSCGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC079N03LSCGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC079N03LSCGATMA1, BSC079N03LSCGATMA1 Datasheet (Total Pages: 10, Size: 384.5 KB)
PDFBSC079N03LSCGATMA1 Datasheet Cover
BSC079N03LSCGATMA1 Datasheet Page 2 BSC079N03LSCGATMA1 Datasheet Page 3 BSC079N03LSCGATMA1 Datasheet Page 4 BSC079N03LSCGATMA1 Datasheet Page 5 BSC079N03LSCGATMA1 Datasheet Page 6 BSC079N03LSCGATMA1 Datasheet Page 7 BSC079N03LSCGATMA1 Datasheet Page 8 BSC079N03LSCGATMA1 Datasheet Page 9 BSC079N03LSCGATMA1 Datasheet Page 10

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BSC079N03LSCGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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