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BSB017N03LX3 G

BSB017N03LX3 G

For Reference Only

Part Number BSB017N03LX3 G
PNEDA Part # BSB017N03LX3-G
Description MOSFET N-CH 30V 147A 2WDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB017N03LX3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB017N03LX3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSB017N03LX3 G, BSB017N03LX3 G Datasheet (Total Pages: 13, Size: 1,548.24 KB)
PDFBSB017N03LX3 G Datasheet Cover
BSB017N03LX3 G Datasheet Page 2 BSB017N03LX3 G Datasheet Page 3 BSB017N03LX3 G Datasheet Page 4 BSB017N03LX3 G Datasheet Page 5 BSB017N03LX3 G Datasheet Page 6 BSB017N03LX3 G Datasheet Page 7 BSB017N03LX3 G Datasheet Page 8 BSB017N03LX3 G Datasheet Page 9 BSB017N03LX3 G Datasheet Page 10 BSB017N03LX3 G Datasheet Page 11

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BSB017N03LX3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7800pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 57W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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