BR25H080FVT-2CE2
For Reference Only
| Part Number | BR25H080FVT-2CE2 |
| PNEDA Part # | BR25H080FVT-2CE2 |
| Description | IC EEPROM 8K SPI 10MHZ 8TSSOPB |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,120 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BR25H080FVT-2CE2 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | BR25H080FVT-2CE2 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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BR25H080FVT-2CE2 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | Automotive, AEC-Q100 |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 8Kb (1K x 8) |
| Memory Interface | SPI |
| Clock Frequency | 10MHz |
| Write Cycle Time - Word, Page | 4ms |
| Access Time | - |
| Voltage - Supply | 2.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP-B |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 8ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
