BFR92PE6327HTSA1
For Reference Only
| Part Number | BFR92PE6327HTSA1 |
| PNEDA Part # | BFR92PE6327HTSA1 |
| Description | RF TRANS NPN 15V 5GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,624 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR92PE6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR92PE6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFR92PE6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz |
| Gain | 10.5dB ~ 16dB |
| Power - Max | 280mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 15mA, 8V |
| Current - Collector (Ic) (Max) | 45mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7.5GHz Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain 10.5dB ~ 16.5dB Power - Max 700mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 8V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package PG-SOT143-4 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 24V Frequency - Transition 2.5GHz Noise Figure (dB Typ @ f) - Gain 7.8dB ~ 8.5dB Power - Max 13W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA, 5V Current - Collector (Ic) (Max) 1.5A Operating Temperature 200°C (TJ) Mounting Type Stud Mount Package / Case 55FT Supplier Device Package 55FT |
