BFR92A,215
For Reference Only
| Part Number | BFR92A,215 |
| PNEDA Part # | BFR92A-215 |
| Description | RF TRANS NPN 15V 5GHZ TO236AB |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 3,060 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR92A Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BFR92A,215 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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BFR92A Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2.1dB ~ 3dB @ 1GHz ~ 2GHz |
| Gain | - |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 65 @ 15mA, 10V |
| Current - Collector (Ic) (Max) | 25mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB (SOT23) |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 100MHz ~ 500MHz Noise Figure (dB Typ @ f) - Gain 8.5dB ~ 10dB Power - Max 140W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 7A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55JT Supplier Device Package 55JT |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 1.9dB ~ 3dB @ 1GHz ~ 2GHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 5V Current - Collector (Ic) (Max) 35mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) 6.5dB @ 60MHz Gain 14dB @ 200MHz Power - Max 350W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
