BFR540,235
For Reference Only
| Part Number | BFR540,235 |
| PNEDA Part # | BFR540-235 |
| Description | RF TRANS NPN 15V 9GHZ TO236AB |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 7,992 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR540 Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BFR540,235 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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BFR540 Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz |
| Gain | - |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 40mA, 8V |
| Current - Collector (Ic) (Max) | 120mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB (SOT23) |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 6dB @ 60MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA, 1V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 9GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 13dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
