BFP640FESDH6327XTSA1
For Reference Only
| Part Number | BFP640FESDH6327XTSA1 |
| PNEDA Part # | BFP640FESDH6327XTSA1 |
| Description | RF TRANS NPN 4.7V 46GHZ 4TSFP |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,742 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 20 - Apr 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFP640FESDH6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFP640FESDH6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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BFP640FESDH6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| Frequency - Transition | 46GHz |
| Noise Figure (dB Typ @ f) | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
| Gain | 8B ~ 30.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | 4-TSFP |
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Manufacturer Infineon Technologies Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.4GHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 800MHz Gain - Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
