BFP182RE7764HTSA1
For Reference Only
| Part Number | BFP182RE7764HTSA1 |
| PNEDA Part # | BFP182RE7764HTSA1 |
| Description | RF TRANS NPN 12V 8GHZ SOT143R-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,128 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFP182RE7764HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFP182RE7764HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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BFP182RE7764HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Gain | 22dB |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-143R |
| Supplier Device Package | PG-SOT143R-4 |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 9GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 13dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 550MHz Noise Figure (dB Typ @ f) 2.3dB ~ 5dB @ 100MHz Gain 17dB ~ 23dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SSM |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 2dB @ 200MHz Gain 20dB ~ 23dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 3mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
