BCR196WE6327HTSA1
For Reference Only
Part Number | BCR196WE6327HTSA1 |
PNEDA Part # | BCR196WE6327HTSA1 |
Description | TRANS PREBIAS PNP 250MW SOT323-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,916 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
BCR196WE6327HTSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | BCR196WE6327HTSA1 |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BCR196WE6327HTSA1 Datasheet
- where to find BCR196WE6327HTSA1
- Infineon Technologies
- Infineon Technologies BCR196WE6327HTSA1
- BCR196WE6327HTSA1 PDF Datasheet
- BCR196WE6327HTSA1 Stock
- BCR196WE6327HTSA1 Pinout
- Datasheet BCR196WE6327HTSA1
- BCR196WE6327HTSA1 Supplier
- Infineon Technologies Distributor
- BCR196WE6327HTSA1 Price
- BCR196WE6327HTSA1 Distributor
BCR196WE6327HTSA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 70mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
The Products You May Be Interested In
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini |
Panasonic Electronic Components Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 150MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3 |
Nexperia Manufacturer Nexperia USA Inc. Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 180MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 3-XFDFN Supplier Device Package DFN1006B-3 |