Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BCR162E6327HTSA1

BCR162E6327HTSA1

For Reference Only

Part Number BCR162E6327HTSA1
PNEDA Part # BCR162E6327HTSA1
Description TRANS PREBIAS PNP 200MW SOT23-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BCR162E6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBCR162E6327HTSA1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
BCR162E6327HTSA1, BCR162E6327HTSA1 Datasheet (Total Pages: 6, Size: 811.21 KB)
PDFBCR 162F E6327 Datasheet Cover
BCR 162F E6327 Datasheet Page 2 BCR 162F E6327 Datasheet Page 3 BCR 162F E6327 Datasheet Page 4 BCR 162F E6327 Datasheet Page 5 BCR 162F E6327 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BCR162E6327HTSA1 Datasheet
  • where to find BCR162E6327HTSA1
  • Infineon Technologies

  • Infineon Technologies BCR162E6327HTSA1
  • BCR162E6327HTSA1 PDF Datasheet
  • BCR162E6327HTSA1 Stock

  • BCR162E6327HTSA1 Pinout
  • Datasheet BCR162E6327HTSA1
  • BCR162E6327HTSA1 Supplier

  • Infineon Technologies Distributor
  • BCR162E6327HTSA1 Price
  • BCR162E6327HTSA1 Distributor

BCR162E6327HTSA1 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

The Products You May Be Interested In

DDTB143TU-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

PDTB143XUF

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

140MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70

DTA123JMT2L

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VMT3

PDTA144VMB,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

180MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

3-XFDFN

Supplier Device Package

DFN1006B-3

UNR42100RA

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

150MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

3-SSIP

Supplier Device Package

NS-B1

Recently Sold

HX5008NL

HX5008NL

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

RCLAMP3654P.TCT

RCLAMP3654P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

SP3010-04UTG

SP3010-04UTG

Littelfuse

TVS DIODE 6V 12.3V 10UDFN

NJM2120D

NJM2120D

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DIP