BCR108WH6433XTMA1
For Reference Only
| Part Number | BCR108WH6433XTMA1 |
| PNEDA Part # | BCR108WH6433XTMA1 |
| Description | TRANS PREBIAS NPN 250MW SOT323-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,398 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BCR108WH6433XTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BCR108WH6433XTMA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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BCR108WH6433XTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 170MHz |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT323-3 |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package VESM |
Manufacturer NXP USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 150mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SC-75 |
