Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BCR 112F E6327

BCR 112F E6327

For Reference Only

Part Number BCR 112F E6327
PNEDA Part # BCR-112F-E6327
Description TRANS PREBIAS NPN 250MW TSFP-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BCR 112F E6327 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBCR 112F E6327
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
BCR 112F E6327, BCR 112F E6327 Datasheet (Total Pages: 8, Size: 836.33 KB)
PDFBCR112WE6327BTSA1 Datasheet Cover
BCR112WE6327BTSA1 Datasheet Page 2 BCR112WE6327BTSA1 Datasheet Page 3 BCR112WE6327BTSA1 Datasheet Page 4 BCR112WE6327BTSA1 Datasheet Page 5 BCR112WE6327BTSA1 Datasheet Page 6 BCR112WE6327BTSA1 Datasheet Page 7 BCR112WE6327BTSA1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BCR 112F E6327 Datasheet
  • where to find BCR 112F E6327
  • Infineon Technologies

  • Infineon Technologies BCR 112F E6327
  • BCR 112F E6327 PDF Datasheet
  • BCR 112F E6327 Stock

  • BCR 112F E6327 Pinout
  • Datasheet BCR 112F E6327
  • BCR 112F E6327 Supplier

  • Infineon Technologies Distributor
  • BCR 112F E6327 Price
  • BCR 112F E6327 Distributor

BCR 112F E6327 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition140MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackagePG-TSFP-3

The Products You May Be Interested In

FJN4311RBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

DDTA115GCA-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

82 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

DDTD123YU-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

DTC144EUBTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

30mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-85

Supplier Device Package

UMT3F

DRA3143T0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SSSMini3-F2-B

Recently Sold

ST3485EBDR

ST3485EBDR

STMicroelectronics

IC TRANSCEIVER HALF 1/1 8SO

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

SFH6106-2T

SFH6106-2T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV TRANS 4-SMD

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

PI3USB30532ZLE

PI3USB30532ZLE

Diodes Incorporated

IC MUX/DEMUX USB 3.0 40TQFN

BLM18KG121TN1D

BLM18KG121TN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

AD8250ARMZ-RL

AD8250ARMZ-RL

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

IRLML2803TRPBF

IRLML2803TRPBF

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT-23