BCP5110TA
For Reference Only
| Part Number | BCP5110TA |
| PNEDA Part # | BCP5110TA |
| Description | TRANS PNP 45V 1A SOT223 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 8,856 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BCP5110TA Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | BCP5110TA |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BCP5110TA Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Power - Max | 2W |
| Frequency - Transition | 150MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 1V Power - Max 300mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/581 Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA, 1V Power - Max 1W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 (TO-205AD) |
