BAT82S-TAP
For Reference Only
| Part Number | BAT82S-TAP |
| PNEDA Part # | BAT82S-TAP |
| Description | DIODE SCHOTTKY 50V 30MA DO35 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 8,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BAT82S-TAP Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | BAT82S-TAP |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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BAT82S-TAP Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 30mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 15mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 200nA @ 50V |
| Capacitance @ Vr, F | 1.6pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 400mA Voltage - Forward (Vf) (Max) @ If 1V @ 400mA Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200nA @ 400V Capacitance @ Vr, F 11pF @ 12V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-41 Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.3V @ 188A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10mA @ 100V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -65°C ~ 200°C |
