BAS316,H3F
For Reference Only
| Part Number | BAS316,H3F |
| PNEDA Part # | BAS316-H3F |
| Description | DIODE GEN PURP 100V 250MA USC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 7,578 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BAS316 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | BAS316,H3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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BAS316 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 250mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3ns |
| Current - Reverse Leakage @ Vr | 200nA @ 80V |
| Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Supplier Device Package | USC |
| Operating Temperature - Junction | 150°C (Max) |
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