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AUIRF7379QTR

AUIRF7379QTR

For Reference Only

Part Number AUIRF7379QTR
PNEDA Part # AUIRF7379QTR
Description MOSFET N/P-CH 30V 5.8A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRF7379QTR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRF7379QTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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AUIRF7379QTR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.8A, 4.3A
Rds On (Max) @ Id, Vgs45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
Power - Max2.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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Supplier Device Package

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