Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AUIRF2804STRL7P

AUIRF2804STRL7P

For Reference Only

Part Number AUIRF2804STRL7P
PNEDA Part # AUIRF2804STRL7P
Description MOSFET N-CH 40V 320A D2PAK-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRF2804STRL7P Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRF2804STRL7P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AUIRF2804STRL7P Datasheet
  • where to find AUIRF2804STRL7P
  • Infineon Technologies

  • Infineon Technologies AUIRF2804STRL7P
  • AUIRF2804STRL7P PDF Datasheet
  • AUIRF2804STRL7P Stock

  • AUIRF2804STRL7P Pinout
  • Datasheet AUIRF2804STRL7P
  • AUIRF2804STRL7P Supplier

  • Infineon Technologies Distributor
  • AUIRF2804STRL7P Price
  • AUIRF2804STRL7P Distributor

AUIRF2804STRL7P Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 160A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6930pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

The Products You May Be Interested In

RTQ035N03TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

54mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 4.5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

285pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

TK31J60W,S1VQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

88mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id

3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

230W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

2N7002E-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.22nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

370mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

SIHD1K4N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.45Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

172pF @ 100V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLZ24L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

100mOhm @ 10A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

MF-USMF020-2

MF-USMF020-2

Bourns

PTC RESET FUSE 30V 200MA 1210

BYV72EW-200,127

BYV72EW-200,127

WeEn Semiconductors

DIODE ARRAY GP 200V 15A TO247-3

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

KSZ8081RNBIA-TR

KSZ8081RNBIA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP