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ATP218-TL-H

ATP218-TL-H

For Reference Only

Part Number ATP218-TL-H
PNEDA Part # ATP218-TL-H
Description MOSFET N-CH 30V 100A ATPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ATP218-TL-H Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberATP218-TL-H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ATP218-TL-H, ATP218-TL-H Datasheet (Total Pages: 7, Size: 375.83 KB)
PDFATP218-TL-H Datasheet Cover
ATP218-TL-H Datasheet Page 2 ATP218-TL-H Datasheet Page 3 ATP218-TL-H Datasheet Page 4 ATP218-TL-H Datasheet Page 5 ATP218-TL-H Datasheet Page 6 ATP218-TL-H Datasheet Page 7

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ATP218-TL-H Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.8mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs70nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds6600pF @ 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageATPAK
Package / CaseATPAK (2 leads+tab)

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