AS3PGHM3_A/H
For Reference Only
| Part Number | AS3PGHM3_A/H |
| PNEDA Part # | AS3PGHM3_A-H |
| Description | DIODE AVALANCHE 400V 2.1A TO277A |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AS3PGHM3_A/H Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | AS3PGHM3_A/H |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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AS3PGHM3_A/H Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP® |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 2.1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.2µs |
| Current - Reverse Leakage @ Vr | 10µA @ 400V |
| Capacitance @ Vr, F | 37pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 1.1V @ 6A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Through Hole Package / Case R6, Axial Supplier Device Package R-6 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-41 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 1V @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
