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AS3BJHM3_A/H

AS3BJHM3_A/H

For Reference Only

Part Number AS3BJHM3_A/H
PNEDA Part # AS3BJHM3_A-H
Description DIODE AVALANCHE 600V 2A DO214AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AS3BJHM3_A/H Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberAS3BJHM3_A/H
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
AS3BJHM3_A/H, AS3BJHM3_A/H Datasheet (Total Pages: 4, Size: 82.58 KB)
PDFAS3BJHM3/52T Datasheet Cover
AS3BJHM3/52T Datasheet Page 2 AS3BJHM3/52T Datasheet Page 3 AS3BJHM3/52T Datasheet Page 4

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AS3BJHM3_A/H Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.05V @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.5µs
Current - Reverse Leakage @ Vr20µA @ 600V
Capacitance @ Vr, F40pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
Operating Temperature - Junction-55°C ~ 175°C

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Series

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Manufacturer

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Series

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2.65V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

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Mounting Type

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Package / Case

TO-247-2

Supplier Device Package

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Operating Temperature - Junction

-65°C ~ 175°C

SK55L-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

5A

Voltage - Forward (Vf) (Max) @ If

750mV @ 5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 50V

Capacitance @ Vr, F

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Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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Operating Temperature - Junction

-55°C ~ 150°C

SF30JG-T

Diodes Incorporated

Manufacturer

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Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

5µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Operating Temperature - Junction

-65°C ~ 150°C

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

12A (DC)

Voltage - Forward (Vf) (Max) @ If

2.1V @ 12A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

310pF @ 1V, 1MHz

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

Operating Temperature - Junction

-55°C ~ 175°C

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