APTM10DDAM19T3G
For Reference Only
| Part Number | APTM10DDAM19T3G |
| PNEDA Part # | APTM10DDAM19T3G |
| Description | MOSFET 2N-CH 100V 70A SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,428 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
APTM10DDAM19T3G Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | APTM10DDAM19T3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- APTM10DDAM19T3G Datasheet
- where to find APTM10DDAM19T3G
- Microsemi
- Microsemi APTM10DDAM19T3G
- APTM10DDAM19T3G PDF Datasheet
- APTM10DDAM19T3G Stock
- APTM10DDAM19T3G Pinout
- Datasheet APTM10DDAM19T3G
- APTM10DDAM19T3G Supplier
- Microsemi Distributor
- APTM10DDAM19T3G Price
- APTM10DDAM19T3G Distributor
APTM10DDAM19T3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Power - Max | 208W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
The Products You May Be Interested In
|
Manufacturer Renesas Electronics America Series - FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs 20mOhm @ 10.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Rds On (Max) @ Id, Vgs 45mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-XFBGA Supplier Device Package EFCP1313-4CC-037 |
Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A, 5A Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V Power - Max 1.5W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |
Manufacturer Series NexFET™ FET Type 2 N-Channel (Dual) Common Source FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Rds On (Max) @ Id, Vgs 13.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 15V Power - Max 15.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package 8-VSON (3.3x3.3) |
