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APTM100H35FT3G

APTM100H35FT3G

For Reference Only

Part Number APTM100H35FT3G
PNEDA Part # APTM100H35FT3G
Description MOSFET 4N-CH 1000V 22A SP3
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM100H35FT3G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM100H35FT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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APTM100H35FT3G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C22A
Rds On (Max) @ Id, Vgs420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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