APTGV50H60BT3G
For Reference Only
| Part Number | APTGV50H60BT3G |
| PNEDA Part # | APTGV50H60BT3G |
| Description | MOD IGBT NPT 600V SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,610 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTGV50H60BT3G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APTGV50H60BT3G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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APTGV50H60BT3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| IGBT Type | NPT, Trench Field Stop |
| Configuration | Boost Chopper, Full Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 65A |
| Power - Max | 250W |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Current - Collector Cutoff (Max) | 250µA |
| Input Capacitance (Cies) @ Vce | 2.2nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
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Manufacturer Microsemi Corporation Series - IGBT Type NPT, Trench Field Stop Configuration Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Power - Max 270W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 3.6nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature - Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
