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APTGV30H60T3G

APTGV30H60T3G

For Reference Only

Part Number APTGV30H60T3G
PNEDA Part # APTGV30H60T3G
Description IGBT NPT BST CHOP FULL BRDG SP3
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTGV30H60T3G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTGV30H60T3G
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
APTGV30H60T3G, APTGV30H60T3G Datasheet (Total Pages: 9, Size: 368.92 KB)
PDFAPTGV30H60T3G Datasheet Cover
APTGV30H60T3G Datasheet Page 2 APTGV30H60T3G Datasheet Page 3 APTGV30H60T3G Datasheet Page 4 APTGV30H60T3G Datasheet Page 5 APTGV30H60T3G Datasheet Page 6 APTGV30H60T3G Datasheet Page 7 APTGV30H60T3G Datasheet Page 8 APTGV30H60T3G Datasheet Page 9

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APTGV30H60T3G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT, Trench Field Stop
ConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Power - Max90W
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Current - Collector Cutoff (Max)250µA
Input Capacitance (Cies) @ Vce1.6nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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