APTGTQ100H65T3G
For Reference Only
| Part Number | APTGTQ100H65T3G |
| PNEDA Part # | APTGTQ100H65T3G |
| Description | POWER MODULE - IGBT |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,466 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTGTQ100H65T3G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APTGTQ100H65T3G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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APTGTQ100H65T3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| IGBT Type | - |
| Configuration | Full Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 100A |
| Power - Max | 250W |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 100µA |
| Input Capacitance (Cies) @ Vce | 6nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | SP3F |
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