Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT60M80L2VRG

APT60M80L2VRG

For Reference Only

Part Number APT60M80L2VRG
PNEDA Part # APT60M80L2VRG
Description MOSFET N-CH 600V 65A TO-264MAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT60M80L2VRG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT60M80L2VRG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT60M80L2VRG Datasheet
  • where to find APT60M80L2VRG
  • Microsemi

  • Microsemi APT60M80L2VRG
  • APT60M80L2VRG PDF Datasheet
  • APT60M80L2VRG Stock

  • APT60M80L2VRG Pinout
  • Datasheet APT60M80L2VRG
  • APT60M80L2VRG Supplier

  • Microsemi Distributor
  • APT60M80L2VRG Price
  • APT60M80L2VRG Distributor

APT60M80L2VRG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs590nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13300pF @ 25V
FET Feature-
Power Dissipation (Max)833W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package264 MAX™ [L2]
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

NTB150N65S3HF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 540µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1985pF @ 400V

FET Feature

-

Power Dissipation (Max)

192W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK-3 (TO-263-3)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFR9010TRLPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI8465DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

104mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 10V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA, CSPBGA

FDP150N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 49A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4760pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

VS-FC220SA20

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 150A, 10V

Vgs(th) (Max) @ Id

5.1V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

21000pF @ 50V

FET Feature

-

Power Dissipation (Max)

789W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

Recently Sold

MMA02040C1001FB300

MMA02040C1001FB300

Vishay Beyschlag

RES SMD 1K OHM 1% 0.4W 0204

EN6360QI

EN6360QI

Intel

DC DC CONVERTER 0.6-5.8V 46W

NUP2201MR6T1G

NUP2201MR6T1G

ON Semiconductor

TVS DIODE 5V 20V 6TSOP

AD842KQ

AD842KQ

Analog Devices

IC OPAMP GP 1 CIRCUIT 14CERDIP

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP

74HC245D

74HC245D

Toshiba Semiconductor and Storage

IC TRANSCVR NON-INVERT 6V 20SOIC

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA