APT1001R1BN

For Reference Only
Part Number | APT1001R1BN |
PNEDA Part # | APT1001R1BN |
Description | MOSFET N-CH 1000V 10.5A TO247AD |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 6,480 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
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APT1001R1BN Resources
Brand | Microsemi |
ECAD Module |
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Mfr. Part Number | APT1001R1BN |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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APT1001R1BN Specifications
Manufacturer | Microsemi Corporation |
Series | POWER MOS IV® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD |
Package / Case | TO-247-3 |
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