AON6562
For Reference Only
| Part Number | AON6562 |
| PNEDA Part # | AON6562 |
| Description | MOSFET N-CH 30V |
| Manufacturer | Alpha & Omega Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,626 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AON6562 Resources
| Brand | Alpha & Omega Semiconductor |
| ECAD Module |
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| Mfr. Part Number | AON6562 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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AON6562 Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | AlphaMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
| Package / Case | 8-VDFN Exposed Pad |
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 4V @ 21µA Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 426pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 26W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK/TP Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
