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AIKP20N60CTAKSA1

AIKP20N60CTAKSA1

For Reference Only

Part Number AIKP20N60CTAKSA1
PNEDA Part # AIKP20N60CTAKSA1
Description IC DISCRETE 600V TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKP20N60CTAKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKP20N60CTAKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKP20N60CTAKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 20A
Power - Max156W
Switching Energy310µJ (on), 460µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C18ns/199ns
Test Condition400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 50A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

20ns/410ns

Test Condition

480V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 15A

Power - Max

46.8W

Switching Energy

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Input Type

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Gate Charge

97nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

8.2A

Current - Collector Pulsed (Icm)

9A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 3A

Power - Max

29W

Switching Energy

290µJ

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr)

52ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

PG-TO220-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

16ns/93ns

Test Condition

600V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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IRG4PH50KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

3.83mJ (on), 1.9mJ (off)

Input Type

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Gate Charge

180nC

Td (on/off) @ 25°C

87ns/140ns

Test Condition

800V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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