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AIKP20N60CTAKSA1

AIKP20N60CTAKSA1

For Reference Only

Part Number AIKP20N60CTAKSA1
PNEDA Part # AIKP20N60CTAKSA1
Description IC DISCRETE 600V TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKP20N60CTAKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKP20N60CTAKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKP20N60CTAKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 20A
Power - Max156W
Switching Energy310µJ (on), 460µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C18ns/199ns
Test Condition400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 50A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

20ns/410ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 24A

Power - Max

200W

Switching Energy

3.83mJ (on), 1.9mJ (off)

Input Type

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Gate Charge

180nC

Td (on/off) @ 25°C

87ns/140ns

Test Condition

800V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

22A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

22ns/100ns

Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

26.5nC

Td (on/off) @ 25°C

15ns/600ns

Test Condition

800V, 8A, 120Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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Series

BIMOSFET™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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