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A2G35S200-01SR3

A2G35S200-01SR3

For Reference Only

Part Number A2G35S200-01SR3
PNEDA Part # A2G35S200-01SR3
Description AIRFAST RF POWER GAN TRANSISTOR
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

A2G35S200-01SR3 Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberA2G35S200-01SR3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - RF
Datasheet
A2G35S200-01SR3, A2G35S200-01SR3 Datasheet (Total Pages: 10, Size: 339.16 KB)
PDFA2G35S200-01SR3 Datasheet Cover
A2G35S200-01SR3 Datasheet Page 2 A2G35S200-01SR3 Datasheet Page 3 A2G35S200-01SR3 Datasheet Page 4 A2G35S200-01SR3 Datasheet Page 5 A2G35S200-01SR3 Datasheet Page 6 A2G35S200-01SR3 Datasheet Page 7 A2G35S200-01SR3 Datasheet Page 8 A2G35S200-01SR3 Datasheet Page 9 A2G35S200-01SR3 Datasheet Page 10

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A2G35S200-01SR3 Specifications

ManufacturerNXP USA Inc.
Series-
Transistor TypeLDMOS
Frequency3.4GHz ~ 3.6GHz
Gain16.1dB
Voltage - Test48V
Current Rating (Amps)-
Noise Figure-
Current - Test291mA
Power - Output180W
Voltage - Rated125V
Package / CaseNI-400S-2S
Supplier Device PackageNI-400S-2S

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