80EPS12
For Reference Only
| Part Number | 80EPS12 |
| PNEDA Part # | 80EPS12 |
| Description | DIODE GEN PURP 1.2KV 80A TO247AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,264 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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80EPS12 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 80EPS12 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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80EPS12 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 80A |
| Voltage - Forward (Vf) (Max) @ If | 1.17V @ 80A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 700mV @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 45V Capacitance @ Vr, F 980pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 500mA Voltage - Forward (Vf) (Max) @ If 1.3V @ 500mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
