71256L35YGI
For Reference Only
| Part Number | 71256L35YGI |
| PNEDA Part # | 71256L35YGI |
| Description | IC SRAM 256K PARALLEL 28SOJ |
| Manufacturer | IDT, Integrated Device Technology |
| Unit Price | Request a Quote |
| In Stock | 7,848 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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71256L35YGI Resources
| Brand | IDT, Integrated Device Technology |
| ECAD Module |
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| Mfr. Part Number | 71256L35YGI |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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71256L35YGI Specifications
| Manufacturer | IDT, Integrated Device Technology Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 28-BSOJ (0.300", 7.62mm Width) |
| Supplier Device Package | 28-SOJ |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFBGA Supplier Device Package 48-FBGA (6x10) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gb (128M x 8) Memory Interface Parallel Clock Frequency 933MHz Write Cycle Time - Word, Page 15ns Access Time 20ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 78-TFBGA Supplier Device Package 78-TWBGA (8x10.5) |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, QDR II+ Memory Size 18Mb (1M x 18) Memory Interface Parallel Clock Frequency 450MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.7V ~ 1.9V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-FBGA (13x15) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 72Mb (1M x 72) Memory Interface Parallel Clock Frequency 167MHz Write Cycle Time - Word, Page - Access Time 3.4ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 209-BGA Supplier Device Package 209-FBGA (14x22) |
