70T3319S166BC
For Reference Only
| Part Number | 70T3319S166BC |
| PNEDA Part # | 70T3319S166BC |
| Description | IC SRAM 4.5M PARALLEL 256CABGA |
| Manufacturer | IDT, Integrated Device Technology |
| Unit Price | Request a Quote |
| In Stock | 7,812 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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70T3319S166BC Resources
| Brand | IDT, Integrated Device Technology |
| ECAD Module |
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| Mfr. Part Number | 70T3319S166BC |
| Category | Semiconductors › Memory ICs › Memory |
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70T3319S166BC Specifications
| Manufacturer | IDT, Integrated Device Technology Inc |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 4.5Mb (256K x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 166MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.6ns |
| Voltage - Supply | 2.4V ~ 2.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-CABGA (17x17) |
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Manufacturer ON Semiconductor Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 4Kb (256 x 16) Memory Interface SPI Clock Frequency 1MHz Write Cycle Time - Word, Page 10ms Access Time - Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-DIP |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-CABGA (13x15) |
Manufacturer Cypress Semiconductor Corp Series GL-S Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 60ns Access Time 110ns Voltage - Supply 1.65V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LBGA Supplier Device Package 64-Fortified BGA (13x11) |
