66082B
For Reference Only
| Part Number | 66082B |
| PNEDA Part # | 66082B |
| Description | RF POWER TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,160 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 22 - Apr 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
66082B Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | 66082B |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 66082B Datasheet
- where to find 66082B
- Microsemi
- Microsemi 66082B
- 66082B PDF Datasheet
- 66082B Stock
- 66082B Pinout
- Datasheet 66082B
- 66082B Supplier
- Microsemi Distributor
- 66082B Price
- 66082B Distributor
66082B Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
The Products You May Be Interested In
|
Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition - Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain 9dB ~ 14.5dB Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 2.3dB @ 1GHz Gain 8.3dB Power - Max 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz Gain - Power - Max 125mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA, 1V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-523 Supplier Device Package 3-SuperMiniMold (19) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 54 @ 1mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 4.7GHz Noise Figure (dB Typ @ f) 1.8dB @ 1GHz Gain 8dB Power - Max 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |
