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64054H

64054H

For Reference Only

Part Number 64054H
PNEDA Part # 64054H
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

64054H Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number64054H
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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64054H Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

-

Power - Max

220mW

DC Current Gain (hFE) (Min) @ Ic, Vce

155 @ 10mA, 2V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

4-DFP

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

5V

Frequency - Transition

18GHz

Noise Figure (dB Typ @ f)

0.8dB ~ 1.5dB @ 2GHz

Gain

9.5dB ~ 11.5dB

Power - Max

130mW

DC Current Gain (hFE) (Min) @ Ic, Vce

140 @ 2mA, 1V

Current - Collector (Ic) (Max)

40mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

3-SMD, Flat Leads

Supplier Device Package

3-SuperMiniMold (M33)

MS1019

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

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MPS3563

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

1.5GHz

Noise Figure (dB Typ @ f)

6.5dB @ 60MHz

Gain

14dB @ 200MHz

Power - Max

350W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6.5GHz

Noise Figure (dB Typ @ f)

1.8dB @ 1GHz

Gain

12dB

Power - Max

1.2W

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89

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