Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

5LN01C-TB-E

5LN01C-TB-E

For Reference Only

Part Number 5LN01C-TB-E
PNEDA Part # 5LN01C-TB-E
Description MOSFET N-CH 50V 100MA 3CP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

5LN01C-TB-E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number5LN01C-TB-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
5LN01C-TB-E, 5LN01C-TB-E Datasheet (Total Pages: 6, Size: 257.43 KB)
PDF5LN01C-TB-E Datasheet Cover
5LN01C-TB-E Datasheet Page 2 5LN01C-TB-E Datasheet Page 3 5LN01C-TB-E Datasheet Page 4 5LN01C-TB-E Datasheet Page 5 5LN01C-TB-E Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 5LN01C-TB-E Datasheet
  • where to find 5LN01C-TB-E
  • ON Semiconductor

  • ON Semiconductor 5LN01C-TB-E
  • 5LN01C-TB-E PDF Datasheet
  • 5LN01C-TB-E Stock

  • 5LN01C-TB-E Pinout
  • Datasheet 5LN01C-TB-E
  • 5LN01C-TB-E Supplier

  • ON Semiconductor Distributor
  • 5LN01C-TB-E Price
  • 5LN01C-TB-E Distributor

5LN01C-TB-E Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs7.8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs1.57nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds6.6pF @ 10V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CP
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

AUIRLR014NTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

140mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

265pF @ 25V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STF16N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

299mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

DMNH6042SPD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.7A (Ta), 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

AUIRFR2905ZTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STP10NM65N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

SRN6045TA-470M

SRN6045TA-470M

Bourns

FIXED IND 47UH 1.6A 200 MOHM SMD

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

EN5329QI

EN5329QI

Intel

DC DC CONVERTER 0.6-4.9V 10W

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

ADG1404YRUZ

ADG1404YRUZ

Analog Devices

IC MULTIPLEXER 4X1 14TSSOP

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

ADM3310EACPZ

ADM3310EACPZ

Analog Devices

IC TRANSCEIVER FULL 3/5 32LFCSP

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3