56DN06ELEMPRXPSA1
For Reference Only
| Part Number | 56DN06ELEMPRXPSA1 |
| PNEDA Part # | 56DN06ELEMPRXPSA1 |
| Description | DIODE GEN PURP 600V 6400A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,030 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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56DN06ELEMPRXPSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | 56DN06ELEMPRXPSA1 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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56DN06ELEMPRXPSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 6400A |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 10000A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100mA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis Mount |
| Package / Case | DO-200AB, B-PUK |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 180°C |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, BAS16 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 215mA (DC) Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 500nA @ 80V Capacitance @ Vr, F 1.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB Operating Temperature - Junction 175°C (Max) |
Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 2µA @ 1200V Capacitance @ Vr, F 69pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer SMC Diode Solutions Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 18A Voltage - Forward (Vf) (Max) @ If 500mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F 12pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -55°C ~ 150°C |
