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40036S

40036S

For Reference Only

Part Number 40036S
PNEDA Part # 40036S
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

40036S Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number40036S
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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40036S Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

CEL

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6.5GHz

Noise Figure (dB Typ @ f)

1.1dB @ 1GHz

Gain

9dB

Power - Max

2W

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.4GHz

Noise Figure (dB Typ @ f)

3.5dB ~ 5dB @ 800MHz

Gain

-

Power - Max

280mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 2mA, 1V

Current - Collector (Ic) (Max)

25mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.2dB @ 1GHz

Gain

13.5dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 7mA, 3V

Current - Collector (Ic) (Max)

65mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain

19dB

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 8V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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DSC9F0100L

Panasonic Electronic Components

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Supplier Device Package

SSMini3-F3-B

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