30WQ10FNTR
For Reference Only
| Part Number | 30WQ10FNTR |
| PNEDA Part # | 30WQ10FNTR |
| Description | DIODE SCHOTTKY 100V 3.5A DPAK |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 8,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 6 - Apr 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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30WQ10FNTR Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 30WQ10FNTR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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30WQ10FNTR Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3.5A |
| Voltage - Forward (Vf) (Max) @ If | 810mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 100V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252AA) |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 2.15A (DC) Voltage - Forward (Vf) (Max) @ If 1.5V @ 2A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10.8µA @ 650V Capacitance @ Vr, F 110pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220ACP Operating Temperature - Junction 175°C (Max) |
Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 600mV @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4.5ns Current - Reverse Leakage @ Vr 100µA @ 60V Capacitance @ Vr, F 20pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case 2-XDFN Supplier Device Package DFN1006D-2 Operating Temperature - Junction 150°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.5A (DC) Voltage - Forward (Vf) (Max) @ If 1.15V @ 1.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.5µs Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 10.4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-220AA Supplier Device Package DO-220AA (SMP) Operating Temperature - Junction -55°C ~ 175°C |
