2SK3539G0L
For Reference Only
Part Number | 2SK3539G0L |
PNEDA Part # | 2SK3539G0L |
Description | MOSFET N-CH 50V .1A S-MINI-3P |
Manufacturer | Panasonic Electronic Components |
Unit Price | Request a Quote |
In Stock | 3,420 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
2SK3539G0L Resources
Brand | Panasonic Electronic Components |
ECAD Module | |
Mfr. Part Number | 2SK3539G0L |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SK3539G0L Datasheet
- where to find 2SK3539G0L
- Panasonic Electronic Components
- Panasonic Electronic Components 2SK3539G0L
- 2SK3539G0L PDF Datasheet
- 2SK3539G0L Stock
- 2SK3539G0L Pinout
- Datasheet 2SK3539G0L
- 2SK3539G0L Supplier
- Panasonic Electronic Components Distributor
- 2SK3539G0L Price
- 2SK3539G0L Distributor
2SK3539G0L Specifications
Manufacturer | Panasonic Electronic Components |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±7V |
Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 3V |
FET Feature | - |
Power Dissipation (Max) | 150mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SMini3-F2 |
Package / Case | SC-85 |
The Products You May Be Interested In
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 4.8A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 27W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
STMicroelectronics Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 60A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 20V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 79mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1055pF @ 50V FET Feature - Power Dissipation (Max) 2.17W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 2.6Ohm @ 500mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92MOD Package / Case TO-226-3, TO-92-3 Long Body |