Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3309(Q)

2SK3309(Q)

For Reference Only

Part Number 2SK3309(Q)
PNEDA Part # 2SK3309-Q
Description MOSFET N-CH 450V 10A TO220FL
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3309(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3309(Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3309(Q), 2SK3309(Q) Datasheet (Total Pages: 6, Size: 225.5 KB)
PDF2SK3309(TE24L Datasheet Cover
2SK3309(TE24L Datasheet Page 2 2SK3309(TE24L Datasheet Page 3 2SK3309(TE24L Datasheet Page 4 2SK3309(TE24L Datasheet Page 5 2SK3309(TE24L Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3309(Q) Datasheet
  • where to find 2SK3309(Q)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage 2SK3309(Q)
  • 2SK3309(Q) PDF Datasheet
  • 2SK3309(Q) Stock

  • 2SK3309(Q) Pinout
  • Datasheet 2SK3309(Q)
  • 2SK3309(Q) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • 2SK3309(Q) Price
  • 2SK3309(Q) Distributor

2SK3309(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FL
Package / CaseTO-220-3, Short Tab

The Products You May Be Interested In

SIHG21N65EF-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2322pF @ 100V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

CWDM305P TR13

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 5V

Vgs (Max)

16V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IXTP44N30T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

BTS282ZE3230AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TEMPFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

49V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

2V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

232nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

Temperature Sensing Diode

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-7-12

Package / Case

TO-220-7

IRFR120ZTR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LNJ208R8ARA

LNJ208R8ARA

Panasonic Electronic Components

LED RED SS TYPE LED SMD

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

AD5676RBRUZ

AD5676RBRUZ

Analog Devices

IC DAC 16BIT V-OUT 20TSSOP