Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

For Reference Only

Part Number 2SK2845(TE16L1,Q)
PNEDA Part # 2SK2845-TE16L1-Q
Description MOSFET N-CH 900V 1A DP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK2845(TE16L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK2845(TE16L1,Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK2845(TE16L1, 2SK2845(TE16L1 Datasheet (Total Pages: 6, Size: 403.44 KB)
PDF2SK2845(TE16L1 Datasheet Cover
2SK2845(TE16L1 Datasheet Page 2 2SK2845(TE16L1 Datasheet Page 3 2SK2845(TE16L1 Datasheet Page 4 2SK2845(TE16L1 Datasheet Page 5 2SK2845(TE16L1 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK2845(TE16L1,Q) Datasheet
  • where to find 2SK2845(TE16L1,Q)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage 2SK2845(TE16L1,Q)
  • 2SK2845(TE16L1,Q) PDF Datasheet
  • 2SK2845(TE16L1,Q) Stock

  • 2SK2845(TE16L1,Q) Pinout
  • Datasheet 2SK2845(TE16L1,Q)
  • 2SK2845(TE16L1,Q) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • 2SK2845(TE16L1,Q) Price
  • 2SK2845(TE16L1,Q) Distributor

2SK2845(TE16L1 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDP
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

R6010ANX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

STP75N75F4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5015pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IPB020NE7N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.8V @ 273µA

Gate Charge (Qg) (Max) @ Vgs

206nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 37.5V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STD20P3H6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F6

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

635pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

HAF1002-90STL-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

+3V, -16V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83

Recently Sold

CKR05BX104KR

CKR05BX104KR

CAP CER 0.1UF 50V BX RADIAL

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

DS5000FP-16

DS5000FP-16

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

EPM7128STC100-15N

EPM7128STC100-15N

Intel

IC CPLD 128MC 15NS 100TQFP

AD8250ARMZ

AD8250ARMZ

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

ADM3202ARU

ADM3202ARU

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

NC7WZ241K8X

NC7WZ241K8X

ON Semiconductor

IC BUFFER NON-INVERT 5.5V US8

83023AMILF

83023AMILF

IDT, Integrated Device Technology

IC TRNSLTR UNIDIRECTIONAL 8SOIC

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP