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2SJ438(AISIN,Q,M)

2SJ438(AISIN,Q,M)

For Reference Only

Part Number 2SJ438(AISIN,Q,M)
PNEDA Part # 2SJ438-AISIN-Q-M
Description MOSFET P-CH
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ438(AISIN Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SJ438(AISIN,Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ438(AISIN, 2SJ438(AISIN Datasheet (Total Pages: 6, Size: 410.33 KB)
PDF2SJ438 Datasheet Cover
2SJ438 Datasheet Page 2 2SJ438 Datasheet Page 3 2SJ438 Datasheet Page 4 2SJ438 Datasheet Page 5 2SJ438 Datasheet Page 6

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2SJ438(AISIN Specifications

ManufacturerToshiba Semiconductor and Storage
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-220NIS
Package / CaseTO-220-3 Full Pack

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