2SD2695(T6CNO,A,F)
For Reference Only
| Part Number | 2SD2695(T6CNO,A,F) |
| PNEDA Part # | 2SD2695-T6CNO-A-F |
| Description | TRANS NPN 2A 60V TO226-3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 3,636 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SD2695(T6CNO Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 2SD2695(T6CNO,A,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2SD2695(T6CNO Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Power - Max | 900mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92MOD |
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Manufacturer Central Semiconductor Corp Series - Transistor Type PNP Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 600mW Frequency - Transition 200MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 |
