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2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

For Reference Only

Part Number 2SD2206(TE6,F,M)
PNEDA Part # 2SD2206-TE6-F-M
Description TRANS NPN 2A 100V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SD2206(TE6 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SD2206(TE6,F,M)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SD2206(TE6, 2SD2206(TE6 Datasheet (Total Pages: 4, Size: 154.16 KB)
PDF2SD2206A(T6SEP Datasheet Cover
2SD2206A(T6SEP Datasheet Page 2 2SD2206A(T6SEP Datasheet Page 3 2SD2206A(T6SEP Datasheet Page 4

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2SD2206(TE6 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 2V
Power - Max900mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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