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2SC5508-T2-A

2SC5508-T2-A

For Reference Only

Part Number 2SC5508-T2-A
PNEDA Part # 2SC5508-T2-A
Description RF TRANS NPN 3.3V 25GHZ SOT343F
Manufacturer CEL
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SC5508-T2-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part Number2SC5508-T2-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
2SC5508-T2-A, 2SC5508-T2-A Datasheet (Total Pages: 10, Size: 1,263.12 KB)
PDF2SC5508-A Datasheet Cover
2SC5508-A Datasheet Page 2 2SC5508-A Datasheet Page 3 2SC5508-A Datasheet Page 4 2SC5508-A Datasheet Page 5 2SC5508-A Datasheet Page 6 2SC5508-A Datasheet Page 7 2SC5508-A Datasheet Page 8 2SC5508-A Datasheet Page 9 2SC5508-A Datasheet Page 10

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2SC5508-T2-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.3V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 2GHz
Gain17dB
Power - Max115mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageSOT-343F

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.9dB ~ 2.4dB @ 900MHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Supplier Device Package

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Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.2dB ~ 2dB @ 1GHz

Gain

13.5dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Microsemi

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

30V

Frequency - Transition

400MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

1W

DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 50mA, 5V

Current - Collector (Ic) (Max)

400mA

Operating Temperature

-65°C ~ 200°C (TJ)

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TO-205AD, TO-39-3 Metal Can

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

4.7V

Frequency - Transition

45GHz

Noise Figure (dB Typ @ f)

0.55dB ~ 1.8dB @ 150MHz ~ 10GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

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SC-82A, SOT-343

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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