2SC2229-Y(MIT,F,M)
For Reference Only
| Part Number | 2SC2229-Y(MIT,F,M) |
| PNEDA Part # | 2SC2229-Y-MIT-F-M |
| Description | TRANS NPN 50MA 150V TO226-3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 3,526 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2SC2229-Y(MIT Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | 2SC2229-Y(MIT,F,M) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC2229-Y(MIT,F,M) Datasheet
- where to find 2SC2229-Y(MIT,F,M)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC2229-Y(MIT,F,M)
- 2SC2229-Y(MIT,F,M) PDF Datasheet
- 2SC2229-Y(MIT,F,M) Stock
- 2SC2229-Y(MIT,F,M) Pinout
- Datasheet 2SC2229-Y(MIT,F,M)
- 2SC2229-Y(MIT,F,M) Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC2229-Y(MIT,F,M) Price
- 2SC2229-Y(MIT,F,M) Distributor
2SC2229-Y(MIT Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Power - Max | 800mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92MOD |
The Products You May Be Interested In
|
Manufacturer Comchip Technology Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V Power - Max 350mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 20mA Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA, 10V Power - Max 150mW Frequency - Transition 1.5GHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package EMT3 |
Manufacturer Renesas Electronics America Series - Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA Current - Collector Cutoff (Max) 20µA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Power - Max 1W Frequency - Transition 15MHz Operating Temperature 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/350 Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1.5A, 2V Power - Max 1W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AA, TO-5-3 Metal Can Supplier Device Package TO-5 |
