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2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J

For Reference Only

Part Number 2SA1930,LBS2DIAQ(J
PNEDA Part # 2SA1930-LBS2DIAQ-J
Description TRANS PNP 2A 180V TO220-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA1930 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA1930,LBS2DIAQ(J
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA1930, 2SA1930 Datasheet (Total Pages: 5, Size: 138.32 KB)
PDF2SA1930 Datasheet Cover
2SA1930 Datasheet Page 2 2SA1930 Datasheet Page 3 2SA1930 Datasheet Page 4 2SA1930 Datasheet Page 5

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2SA1930 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)180V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Power - Max2W
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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